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hexfet ? power mosfet d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
so-8 parameter max. units v ds drain- source voltage -55 v i d @ t c = 25c continuous drain current, v gs @ 10v -3.4 i d @ t c = 70c continuous drain current, v gs @ 10v -2.7 a i dm pulsed drain current -27 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10 s30 v e as single pulse avalanche energy 114 dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings parameter typ. max. units r ja maximum junction-to-ambient ??? 62.5 c/w thermal resistance features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds -55 v r ds(on) max (@v gs = -10v) 0.105 q g (typical) 26 nc i d (@t a = 25c) -3.4 a

!" form quantity IRF7342PBF-1 so-8 tape and reel 4000 irf7342trpbf-1 package type standard pack orderable part number base part number

!" parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.054 ??? v/c reference to 25c, i d = -1ma ??? 0.095 0.105 v gs = -10v, i d = -3.4a ??? 0.150 0.170 v gs = -4.5v, i d = -2.7a v gs(th) gate threshold voltage -1.0 ??? ??? v v ds = v gs , i d = -250 a g fs forward transconductance 3.3 ??? ??? s v ds = -10v, i d = -3.1a ??? ??? -2.0 v ds = -55v, v gs = 0v ??? ??? -25 v ds = -55v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 26 38 i d = -3.1a q gs gate-to-source charge ??? 3.0 4.5 nc v ds = -44v q gd gate-to-drain ("miller") charge ??? 8.4 13 v gs = -10v, see fig. 10 t d(on) turn-on delay time ??? 14 22 v dd = -28v t r rise time ??? 10 15 i d = -1.0a t d(off) turn-off delay time ??? 43 64 r g = 6.0 t f fall time ??? 22 32 r d = 16 , c iss input capacitance ??? 690 ??? v gs = 0v c oss output capacitance ??? 210 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 86 ??? ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) #$
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&'( $ parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 54 80 ns t j = 25c, i f = -2.0a q rr reverse recoverycharge ??? 85 130 nc di/dt = -100a/ s source-drain ratings and characteristics ))) ))) ))) ))) % * % $ s d g repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd -3.4a, di/dt -150a/ s, v dd v (br)dss , t j 150c notes: starting t j = 25c, l = 20mh r g = 25 , i as = -3.4a. (see figure 8) pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec
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0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v

0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j

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!' 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v , - -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a " % %

( ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d
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0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds '
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()*$+ % 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss

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!" so-8 package outline dimensions are shown in milimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot pr i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rol ling dimens ion: mil l ime t er 3. dimens ions are s hown in millimet ers [inches ]. 5 dime ns ion doe s not incl ude mol d prot rus ions . 6 dime ns ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xcee d 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s oldering t o a subs t rat e. mold prot rus ions not t o e xcee d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx int ernat ional rect ifier logo f 7101 y = l as t digit of t he ye ar part number lot code ww = we e k e xample: t his is an irf7101 (mos fe t ) p = de s i gnat e s l e ad-f r e e product (optional) a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8 date comments ? corrected part number from" IRF7342PBF-1" to "irf7342trpbf-1" -all pages ? removed the "IRF7342PBF-1" bulk part number from ordering information on page1 revision history 10/16/2014

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